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2002, 26:1–14. 30. Bilalbegovic G: Structures and melting in infinite gold nanowires. Solid State Commun 2000, 115:73–76.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions FGT conceived of the research Ruxolitinib supplier ZD1839 cell line work and participated in the analysis. YCC performed
the TEM analysis. SNT participated in the bias-applying circuit, coordination, and analysis. CTY and JT performed the fluorescence intensity inspection design and analyses. HWC performed all AFM experiments, analyzed the TEM and fluorescence results, and drafted the manuscript. All authors have read and Selleckchem MK-0518 approved the final manuscript.”
“Background GaN has been the subject of strategic research among all compound semiconductors and has been explored widely and rightly for its various characteristics, like direct wide band gap, high breakdown field, high saturation velocity, and chemical and radiation hardness [1]. The combination of all these properties makes GaN a preferred material for optoelectronics and high-temperature and high-power RF applications. In applications like power rectifier and HEMT, a metal–semiconductor contact with high Schottky barrier height (SBH), high rectification efficiency, and low reverse leakage current is needed [1, 2]. Also, the quality of the metal–semiconductor interface is affected by the process steps and deposition vacuum since contamination and oxide layer growth at the interface may result in SBH reduction and high leakage current by inducing local nanoscopic patches of low barrier heights.