(C) 2010 American Institute of Physics. [doi:10.1063/1.3499262]“
“We selleck inhibitor evaluated the molecular, anatomical and physiological properties of a soybean line transformed to improve drought tolerance with an rd29A:AtDREB1A construct. This construct expressed dehydration-responsive element binding protein DREB1A from the stress-inducible rd29A promoter. The greenhouse growth test included four randomized blocks of soybean plants, with each treatment performed in triplicate. Seeds from the non-transformed soybean cultivar BR16 and from the genetically modified soybean P58 line (T-2 generation) were grown at

15% gravimetric humidity for 31 days. To induce water deficit, the humidity was reduced to 5% gravimetric humidity (moderate stress) for 29 days and then to 2.5% gravimetric humidity (severe stress). AtDREB1A gene expression was higher in the genetically modified P58 plants during water deficit, demonstrating transgene stability in T-2 generations

and induction of the rd29A promoter. Drought-response genes, including GmPI-PLC, GmSTP, GmGRP, learn more and GmLEA14, were highly expressed in plants submitted to severe stress. Genetically modified plants had higher stomatal conductance and consequently higher photosynthetic and transpiration rates. In addition, they had more chlorophyll. Overexpression of AtDREB1A may contribute to a decrease in leaf thickness; however, a thicker abaxial epidermis was observed. Overexpression of AtDREB1A in soybean appears to enhance drought tolerance.”
“Zinc oxide (ZnO) thin films annealed at different temperatures

were studied with photoluminescence (PL), electrical resistivity, Hall mobility, and 1/f noise spectroscopy. Relatively high electrical conductivity and carrier find more concentration in sample annealed at 400 degrees C suggested the presence of ZnO interstitials. Rapid reduction in electrical conductivity and carrier concentration upon increasing the annealing temperature suggested that ZnO interstitials could be eliminated by high temperature annealing. Presence of G-R noise in sample annealed at 400 degrees C indicated high level of electron trapping activities. Density of Zn vacancies acting as electron traps was estimated by Lorentzian fitting on the G-R noise. PL spectra exhibiting dominant green emission in all samples suggested the presence of Zn vacancies in high concentration. Yellow-orange emission in PL in samples annealed at 600 degrees C and below indicated the presence of O interstitials, while the same emission in samples annealed at higher temperatures were ascribed to Si impurities diffused from the substrate. Sharp reduction in mobility and surge in Hooge’s parameter in sample annealed at 700 degrees C implied high level of electron scattering due to large extrinsic Si impurities.